Raw material for forming thin film by atomic layer deposition method, and method for manufacturing thin film

A raw material for formation of a thin film for use in atomic layer deposition, the raw material containing a yttrium compound represented by general formula (1). (In the formula, R1 represents a C3-8 secondary alkyl group, R2 represents C4-8 tertiary alkyl group, and R3 represents a hydrogen atom o...

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Bibliographische Detailangaben
Hauptverfasser:	HATASE, MASAKO, MITSUI, CHIAKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A raw material for formation of a thin film for use in atomic layer deposition, the raw material containing a yttrium compound represented by general formula (1). (In the formula, R1 represents a C3-8 secondary alkyl group, R2 represents C4-8 tertiary alkyl group, and R3 represents a hydrogen atom or a C1-5 primary, secondary, or tertiary alkyl group.).