Testing structure and manufacturing method of the same, semiconductor structure testing method using testing structure

Testing structure and manufacturing method of the same, semiconductor structure testing method using testing structure

A semiconductor structure testing method using testing structure is provided. The method includes the operations as follows. A testing structure is formed. An electrostatic force is formed to a polysilicon structure of the testing structure. A capacitance of the polysilicon structure is measured. Th...

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Bibliographische Detailangaben
Hauptverfasser: TENG, YIUAN, TSAI, WENING, LIANG, VICTOR CHIANG, TU, JUNG-KUO, SHEN, CHING-KAI
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor structure testing method using testing structure is provided. The method includes the operations as follows. A testing structure is formed. An electrostatic force is formed to a polysilicon structure of the testing structure. A capacitance of the polysilicon structure is measured. The forming of the testing structure includes the operations as follows. A first substrate having a first surface is provided. A first trench is formed at the first surface of the first substrate. A polysilicon structure is formed in the first trench. A second trench is formed at the first surface of the first substrate, thereby the polysilicon structure is dangling over the second trench from a side view perspective. A testing structure and manufacturing method of the same are also provided.