Nitride epitaxial wafer and method for manufacturing the same

This invention discloses a nitride epitaxial wafer that reduced the occurrence of alloy disorder scattering and method for manufacturing the same, which includes a substrate, an nucleation layer, at least one aluminum gallium nitride buffer layer, a high resistance layer, a gallium nitride channel layer, a low-vacancy channel layer, an electron supply layer, and a cover layer. This invention disposes a low-vacancy channel layer to reduce the uneven distribution of nitrogen atoms and gallium atoms at the heterojunction between the electron supply layer and the gallium nitride channel layer due to the vacancy of nitrogen atoms and gallium atoms in the gallium nitride channel layer. In addition, by reducing the uneven distribution of nitrogen atoms and gallium atoms at the heterojunction between the electron supply layer and the gallium nitride channel layer, the occurrence of alloy disorder scattering can be reduced, thereby improving the electron mobility and the performance of the device.