P-GaN high electron mobility transistor

A p-GaN high electron mobility transistor is provided to solve the problem of direct tunneling and gate electrode leakage current of the conventional p-GaN high electron mobility transistor. The transistor includes a substrate, a channel layer located on the substrate, a supply layer stacked on the channel layer, and a doped layer stacked on the supply layer. A doping concentration of the doped layer is gradually distributed, wherein the doped concentration in a first doped region close to the supply layer is lower than the doped concentration in a second doped region far from the supply layer. A gate electrode is located on the doped layer, a source electrode and a drain electrode are respectively electrically connected to the channel layer and the supply layer.