Production method for doping material solution for film formation, production method for layered product, doping material solution for film formation, and semiconductor film

The production method for a doping material solution for film formation according to the present invention is characterized by comprising a step for producing a dopant precursor solution separately from a material for film formation, by firstly mixing a solute that contains an organic dopant compoun...

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Bibliographische Detailangaben
Hauptverfasser:	DANG, THAI GIANG, SAKATSUME, TAKAHIRO, HASHIGAMI, HIROSHI, YASUOKA, TATSUYA, WATABE, TAKENORI, KAWAHARAMURA, TOSHIYUKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The production method for a doping material solution for film formation according to the present invention is characterized by comprising a step for producing a dopant precursor solution separately from a material for film formation, by firstly mixing a solute that contains an organic dopant compound containing a halogen or contains a halide of a dopant, with a first solvent without mixing the solute with other solvents, and is characterized in that the first solvent is acidic. As a result, provided is a production method that is for a doping material solution for film formation and that enables stable formation of a high-quality thin film having superior electrical characteristics.