Polysilazane, siliceous film-forming composition comprising the same, and method for producing siliceous film using the same

To provide a polysilazane and a siliceous film-forming composition which can suppress film thickness variation and voids even in the ozone containing atmosphere. A polysilazane comprising N-Si bonds, wherein the ratio (NA3/NA2) of the number of N atoms having 3 N-Si bonds (NA3) to the number of N at...

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Bibliographische Detailangaben
Hauptverfasser:	OKAMURA, TOSHIYA, ISHII, MASAHIRO, KUROKAWA, MASAMICHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	To provide a polysilazane and a siliceous film-forming composition which can suppress film thickness variation and voids even in the ozone containing atmosphere. A polysilazane comprising N-Si bonds, wherein the ratio (NA3/NA2) of the number of N atoms having 3 N-Si bonds (NA3) to the number of N atoms having 2 N-Si bonds (NA2) is 1.8 to 6.0.