GaN high electron mobility transistor

A GaN high electron mobility transistor is provided to solve the problem of increased manufacturing cost and power consumption to prevent the kink effect of the conventional GaN high electron mobility transistor. The transistor comprises a substrate, a buffer layer is located on the substrate, a barrier layer is laminated on the buffer layer, a channel layer is laminated on the barrier layer and a supply layer is laminated on the channel layer. The barrier layer is either a p-type semiconductor or a wide band gap material. A gate electrode is located on the supply layer. A source electrode and a drain electrode are respectively electrically connected to the channel layer and the supply layer.