Semiconductor device and electrostatic discharge element

The present disclosure relates to a semiconductor device including an anode region, a cathode region, an electrostatic discharge region and an isolation well. The anode region and the cathode region respectively have a first type dopant. The electrostatic discharge region has a second type dopant, and the anode region and the cathode region are formed on the electrostatic discharge region. The isolation well has the first type dopant and surrounds the electrostatic discharge region. The electrostatic discharge region is electrically connected to the isolation well, and both are in a floating state. The isolation well includes at least a first heavily doped region. The electrostatic discharge region includes at least a second heavily doped region. The first heavily doped region is electrically connected to the second heavily doped region, and both are in a floating state.