Integrated circuit device and method for forming the same

Integrated circuit device and method for forming the same

An integrated circuit device includes a ferroelectric layer that is formed with chlorine-free precursors. This ferroelectric material may be of the composition HFxZr1-xO2. The ferroelectric layer may be used in a memory device such as a ferroelectric field effect transistor (FeFET). A ferroelectric...

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Bibliographische Detailangaben
Hauptverfasser: HUANG, YENIEH, LIN, CHUNG-TE, CHEN, HAIING
Format: Patent
Sprache:chi ; eng
Schlagworte:
ELECTRICITY
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Zusammenfassung:An integrated circuit device includes a ferroelectric layer that is formed with chlorine-free precursors. This ferroelectric material may be of the composition HFxZr1-xO2. The ferroelectric layer may be used in a memory device such as a ferroelectric field effect transistor (FeFET). A ferroelectric layer formed with chlorine-free precursors has no chlorine residue. The absence of chlorine ameliorates time-dependent dielectric breakdown (TDDB) and Bias Temperature Instability (BTI).