Vertical field effect transistor, field effect transistor, and cascode device
A lateral surface gate vertical field effect transistor with adjustable output capacitance is described herein. The lateral surface gate vertical field effect transistor includes both a lateral gate and a trench gate. The lateral gate modulates a surface channel and the trench gate includes a contro...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A lateral surface gate vertical field effect transistor with adjustable output capacitance is described herein. The lateral surface gate vertical field effect transistor includes both a lateral gate and a trench gate. The lateral gate modulates a surface channel and the trench gate includes a controllable depth. The controllable depth may be varied to advantageously adjust output capacitance. |
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