Non-volatile memory structure and manufacturing method thereof

A non-volatile memory structure including a substrate, a first dielectric layer, a floating gate structure, a second dielectric layer, and a control gate is provided. The first dielectric layer is disposed on the substrate. The floating gate structure includes a first floating gate and a second floa...

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Bibliographische Detailangaben
Hauptverfasser:	LIN, WEIANG, CHEN, SHIH-HSI, YANG, WENUNG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A non-volatile memory structure including a substrate, a first dielectric layer, a floating gate structure, a second dielectric layer, and a control gate is provided. The first dielectric layer is disposed on the substrate. The floating gate structure includes a first floating gate and a second floating gate. The first floating gate is disposed on the first dielectric layer. The second floating gate is disposed on the first floating gate. The grain size of the second floating gate is smaller than the grain size of the first floating gate. The second dielectric layer is disposed on the floating gate structure. The control gate is disposed on the second dielectric layer.