Manufacturing method for semiconductor device

A manufacturing method for a semiconductor device of the present invention includes: preparing a semiconductor wafer including an electrode formed therein; electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer; fillin...

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Bibliographische Detailangaben
Hauptverfasser: HOSOYAMADA, SUMIKAZU, KUMAGAYA, YOSHIKAZU, CHIKAI, TOMOSHIGE, SAKUMOTO, SHOTARO, HONDA, HIROKAZU, TAMAKAWA, MICHIAKI, MATSUBARA, HIROAKI, WATANABE, SHINJI, MIYAKOSHI, TAKESHI, NAKAMURA, TAKASHI, IWASAKI, TOSHIHIRO, DEMACHI, HIROSHI, ISHIDO, KIMINORI, NAKAMURA, SHINGO
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A manufacturing method for a semiconductor device of the present invention includes: preparing a semiconductor wafer including an electrode formed therein; electrically connecting a first semiconductor element formed in a semiconductor chip and the electrode formed in the semiconductor wafer; filling a gap between the semiconductor wafer and the semiconductor chip with a first insulating resin layer; forming a second insulating resin layer on the semiconductor wafer; grinding the second insulating resin layer and the semiconductor chip until a thickness of the semiconductor chip reaches a predetermined thickness; forming a first insulating layer on the second insulating resin layer and the semiconductor chip; forming a line on the first insulating layer connected with a conductive material filled an opening in the first insulating layer and the second insulating resin layer to expose the electrode; and grinding the semiconductor wafer until a thickness of the semiconductor wafer reaches a predetermined thickn