Resistive random access memory and method for initializing the same

Resistive random access memory and method for initializing the same

A resistive random access memory and method for initializing the same are provided to overcome the problem where the conventional method for initializing the resistive random access memory is necessarily applied additional bias. The method for initializing includes irradiating a memory unit with an...

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Bibliographische Detailangaben
Hauptverfasser: LIN, SHIH-KAI, LIN, CHUNU, TSENG, YI-TING, CHEN, PO-HSUN, CHEN, WENUNG, CHANG, TINGANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Zusammenfassung:A resistive random access memory and method for initializing the same are provided to overcome the problem where the conventional method for initializing the resistive random access memory is necessarily applied additional bias. The method for initializing includes irradiating a memory unit with an electromagnetic wave at a frequency above 1016 Hertz and operating a switching voltage between high and low resistant state of the memory unit. The resistive random access memory includes several memory units, each of which includes a resistance-changing layer between an upper electrode layer and a lower electrode layer, and a switching circuit which respectively electrically connects to the several memory units.