CMOS image sensor
A CMOS image sensor, including a substrate, a photodiode formed in the substrate, a first floating diffusion region formed in the substrate and connecting with a reset transistor, a transfer transistor formed on the substrate and between the photodiode and the first floating diffusion region, a seco...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A CMOS image sensor, including a substrate, a photodiode formed in the substrate, a first floating diffusion region formed in the substrate and connecting with a reset transistor, a transfer transistor formed on the substrate and between the photodiode and the first floating diffusion region, a second floating diffusion region formed in the substrate and spaced apart from the first floating diffusion region, wherein doping types of the first floating diffusion region and the second floating diffusion region are the same, and the doping concentration of second floating diffusion region is lower than the doping concentration of first floating diffusion region. |
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