Process kit for a high throughput processing chamber

Process kit for a high throughput processing chamber

A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In...

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Hauptverfasser: CHUC, KIEN N, WANG, YAN-JIE, KIM, SUNGJIN, GHOSH, KALYANJIT, KULKARNI, MAYUR G, BALUJA, SANJEEV
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator CHUC, KIEN N
WANG, YAN-JIE
KIM, SUNGJIN
GHOSH, KALYANJIT
KULKARNI, MAYUR G
BALUJA, SANJEEV
description A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-Channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202205491A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202205491A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202205491A3</originalsourceid><addsrcrecordid>eNrjZDAJKMpPTi0uVsjOLFFIyy9SSFTIyEzPUCjJKMovTc8oKC1RKICoyMxLV0jOSMxNSi3iYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxIeFGBkZGBqYmloaOxsSoAQAzTiz5</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Process kit for a high throughput processing chamber</title><source>esp@cenet</source><creator>CHUC, KIEN N ; WANG, YAN-JIE ; KIM, SUNGJIN ; GHOSH, KALYANJIT ; KULKARNI, MAYUR G ; BALUJA, SANJEEV</creator><creatorcontrib>CHUC, KIEN N ; WANG, YAN-JIE ; KIM, SUNGJIN ; GHOSH, KALYANJIT ; KULKARNI, MAYUR G ; BALUJA, SANJEEV</creatorcontrib><description>A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-Channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220201&amp;DB=EPODOC&amp;CC=TW&amp;NR=202205491A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220201&amp;DB=EPODOC&amp;CC=TW&amp;NR=202205491A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHUC, KIEN N</creatorcontrib><creatorcontrib>WANG, YAN-JIE</creatorcontrib><creatorcontrib>KIM, SUNGJIN</creatorcontrib><creatorcontrib>GHOSH, KALYANJIT</creatorcontrib><creatorcontrib>KULKARNI, MAYUR G</creatorcontrib><creatorcontrib>BALUJA, SANJEEV</creatorcontrib><title>Process kit for a high throughput processing chamber</title><description>A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-Channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAJKMpPTi0uVsjOLFFIyy9SSFTIyEzPUCjJKMovTc8oKC1RKICoyMxLV0jOSMxNSi3iYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxIeFGBkZGBqYmloaOxsSoAQAzTiz5</recordid><startdate>20220201</startdate><enddate>20220201</enddate><creator>CHUC, KIEN N</creator><creator>WANG, YAN-JIE</creator><creator>KIM, SUNGJIN</creator><creator>GHOSH, KALYANJIT</creator><creator>KULKARNI, MAYUR G</creator><creator>BALUJA, SANJEEV</creator><scope>EVB</scope></search><sort><creationdate>20220201</creationdate><title>Process kit for a high throughput processing chamber</title><author>CHUC, KIEN N ; WANG, YAN-JIE ; KIM, SUNGJIN ; GHOSH, KALYANJIT ; KULKARNI, MAYUR G ; BALUJA, SANJEEV</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202205491A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHUC, KIEN N</creatorcontrib><creatorcontrib>WANG, YAN-JIE</creatorcontrib><creatorcontrib>KIM, SUNGJIN</creatorcontrib><creatorcontrib>GHOSH, KALYANJIT</creatorcontrib><creatorcontrib>KULKARNI, MAYUR G</creatorcontrib><creatorcontrib>BALUJA, SANJEEV</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHUC, KIEN N</au><au>WANG, YAN-JIE</au><au>KIM, SUNGJIN</au><au>GHOSH, KALYANJIT</au><au>KULKARNI, MAYUR G</au><au>BALUJA, SANJEEV</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Process kit for a high throughput processing chamber</title><date>2022-02-01</date><risdate>2022</risdate><abstract>A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-Channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Process kit for a high throughput processing chamber
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T02%3A34%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHUC,%20KIEN%20N&rft.date=2022-02-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202205491A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true