Process kit for a high throughput processing chamber

A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In...

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Bibliographische Detailangaben
Hauptverfasser: CHUC, KIEN N, WANG, YAN-JIE, KIM, SUNGJIN, GHOSH, KALYANJIT, KULKARNI, MAYUR G, BALUJA, SANJEEV
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-Channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.