Etching method and etching apparatus

This etching method comprises a preparation step and a removal step. In the preparation step, a substrate which comprises a first film, a second film that is superposed on the first film and a hard mask that is superposed on the second film, wherein the second film is etched until the first film is...

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Bibliographische Detailangaben
Hauptverfasser:	YOU, GEN, SHINDO, NAOKI, SEINO, TAKUYA, OKABE, NORIAKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	This etching method comprises a preparation step and a removal step. In the preparation step, a substrate which comprises a first film, a second film that is superposed on the first film and a hard mask that is superposed on the second film, wherein the second film is etched until the first film is exposed therefrom using, as an etching mask, the hard mask that has been patterned, is prepared. In the removal step, the hard mask is removed with use of a fluorine-containing gas. Meanwhile, the removal step is carried out for a time duration that is longer than the first time duration from the start of the supply of the fluorine-containing gas to the start of the etching of the hard mask, but shorter than the second time duration from the start of the supply of the fluorine-containing gas to the start of the etching of the first film.