Etching method and etching device

According to the present invention, a silicon film that is formed on the surface of a substrate is etched by supplying a fluorine gas and an amine gas to the substrate.

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	TAKAHASHI, NOBUHIRO, ORII, TAKEHIKO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	According to the present invention, a silicon film that is formed on the surface of a substrate is etched by supplying a fluorine gas and an amine gas to the substrate.