Method for operating an EUV lithography apparatus, and EUV lithography apparatus

The invention relates to a method for operating an EUV lithography apparatus (1) comprising at least one vacuum housing (27), in which at least one reflective optical element (12) is arranged, comprising: operating the EUV lithography apparatus (1) in an exposure operating mode (B), in which EUV rad...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	BECKER, MORITZ, EHM, DIRK HEINRICH
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The invention relates to a method for operating an EUV lithography apparatus (1) comprising at least one vacuum housing (27), in which at least one reflective optical element (12) is arranged, comprising: operating the EUV lithography apparatus (1) in an exposure operating mode (B), in which EUV radiation (5) is radiated into the vacuum housing (27), wherein a reducing plasma is generated at a surface (12a) of the reflective optical element (12) as a result of an interaction of the EUV radiation (5) with a residual gas present in the vacuum housing (27). In the method, after an exposure pause, in which no EUV radiation (5) is radiated into the vacuum housing (27), and before renewed operation of the EUV lithography apparatus (1) in the exposure operating mode (B), the EUV lithography apparatus (1) is operated in a recovery operating mode, in which oxidized contaminants at the surface (12a) of the reflective optical element (12) are reduced in order to recover a transmission of the EUV lithography apparatus (1