A structure to increase breakdown voltage of high electron mobility transistor

A structure to increase breakdown voltage of high electron mobility transistor is used to solve the problem of function loss of the high electron mobility transistor which working on high voltage state. The structure includes one substrate, a transmit layer located on the substrate, a gate insulating layer and an electric-field-dispersion layer. The upper half of the transmit layer is an electron supply layer, and the lower half of the transmit layer is an electron tunnel layer. The gate insulating layer is laminated on the electron supply layer, and the electric-field-dispersion layer is laminated on the gate insulating layer. The permittivity of the electric-field-dispersion layer is smaller than the permittivity of the gate insulating layer. A gate electrode is located between the electric-field-dispersion layer and the gate insulating layer. Respectively, a source electrode and a drain electrode are electrically connected to the electric-field-dispersion layer, the gate insulating layer, the electron supp