Semiconductor storage device

A semiconductor storage device, comprising: a first stacked body including a plurality of first insulation layers and a plurality of first gate electrode layers that are alternately stacked in a first direction; a first semiconductor layer extending in the first stacked body in the first direction; a first charge storage layer between the first semiconductor layer and the plurality of first gate electrode layers; a second stacked body including a plurality of second insulation layers and a plurality of second gate electrode layers that are alternately stacked in the first direction; a second semiconductor layer extending in the second stacked body in the first direction; a second charge storage layer between the second semiconductor layer and the plurality of second gate electrode layers; a conductive layer between the first stacked body and the second stacked body and extending in the first direction and a second direction perpendicular to the first direction; and a first silicon oxide layer between the cond