Semiconductor photoresist composition and method of forming patterns using the composition

Disclosed are a semiconductor photoresist composition including (A) an organometallic compound, (B) an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25 DEG C, and a pKa of about 3.

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Bibliographische Detailangaben
Hauptverfasser:	HAN, SEUNG, MOON, KYUNG-SOO, KIM, JAE-HYUN, NAMGUNG, RAN, CHAE, SEUNG-YONG, CHEON, HWAN-SUNG, WOO, CHANG-SOO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORGANIC CHEMISTRY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Disclosed are a semiconductor photoresist composition including (A) an organometallic compound, (B) an organic acid having a vapor pressure of less than or equal to about 1.0 mmHg at 25 DEG C, and a pKa of about 3.