Solid-state imaging element and imaging system
This solid-state imaging element comprises a first semiconductor and a second semiconductor that has a different composition than the first semiconductor and is electrically connected with the first semiconductor. The first semiconductor includes a photodiode for performing photoelectric conversion...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | This solid-state imaging element comprises a first semiconductor and a second semiconductor that has a different composition than the first semiconductor and is electrically connected with the first semiconductor. The first semiconductor includes a photodiode for performing photoelectric conversion by incident light, a plurality of first charge storage units for storing electrical charges generated by photoelectric conversion, and a transfer gate that causes a charge generated by photoelectric conversion to move to one of the plurality of first charge storage units. The second semiconductor includes a second charge storage unit whereby it is possible to store a charge and a potential detection node that detects the potential of the second charge storage unit. The solid-state imaging element additionally comprises a reset transistor for resetting the potential of the first charge storage units to a predetermined potential. |
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