Pattern inspection device and pattern inspection method

A pattern inspection device according to an embodiment of the present invention is characterized by comprising: a secondary electron image acquisition mechanism that, using an electron beam, acquires a secondary electron image of a graphic pattern formed on a substrate; a uniform sizing processing unit that, using a uniform sizing amount set in advance, resizes the line width of a design pattern on which the graphic pattern is based; a reference image creating unit that develops an image of data of the design pattern with resized line width, and thereby creates a reference image corresponding to the secondary electron image; a line width-dependent correction unit that, using a correction amount set in advance dependent on the size of the line width, corrects the line width of the graphic pattern in the secondary electron image; and a comparison unit that compares the line width of the graphic pattern in the reference image and the line width of the corresponding graphic pattern in the secondary electron image