Method for measuring photomasks

The invention relates to a method for measuring a photomask for semiconductor lithography, including the following steps: - recording an aerial image of at least one region of the photomask, - defining at least one region of interest (1), - ascertaining structure edges (3) in at least one region of...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	BEYER, DIRK, SIMAKOV, DMITRY, THALER, THOMAS, STEINERT, STEFFEN, BUTTGEREIT, UTE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The invention relates to a method for measuring a photomask for semiconductor lithography, including the following steps: - recording an aerial image of at least one region of the photomask, - defining at least one region of interest (1), - ascertaining structure edges (3) in at least one region of interest (1), - providing desired structures (4) to be produced by the photomask, - adapting the ascertained structure edges (3) to the desired structures (4), - displacing the adapted structure edges by means of the results of a separate registration measurement.