Laser device and semiconductor device having the same

A semiconductor device, viewed from the cross section thereof, includes a permanent substrate having a first boundary and a second boundary; an epitaxial structure on the permanent substrate including a semiconductor structure having a first side adjacent to the first boundary and a second side adjacent to the second boundary; a first metal connection layer between the epitaxial structure and the permanent substrate, the first metal connection layer having a first protrusion extending outward beyond the first side, and a second protrusion extending outward beyond the second side; and a first electrode on the first metal connection layer in contact with the first protrusion and the second protrusion.