Fused quartz crucible for producing silicon crystals, and method for producing a fused quartz crucible

A fused quartz crucible for pulling a single crystal of silicon according to the Czochralski technique, having an inner side on which there is located an inner layer of fused quartz that forms a surface, the inner layer being provided with a crystallization promoter which on heating of the fused qua...

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Bibliographische Detailangaben
Hauptverfasser:	ZEMKE, DIRK, LEHMANN, TONI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A fused quartz crucible for pulling a single crystal of silicon according to the Czochralski technique, having an inner side on which there is located an inner layer of fused quartz that forms a surface, the inner layer being provided with a crystallization promoter which on heating of the fused quartz crucible in the context of its designated use, in crystal pulling, brings about crystallization of fused quartz to form [beta]-cristobalite, wherein the concentration C of synthetically obtained SiO2 at a distance d from the surface is greater than the concentration of synthetically obtained SiO2 at a distance d2 from the surface, where d2 is greater than d.