Laser annealing device and laser annealing method

This laser annealing device causes a CW laser light to move unidirectionally relative to a noncrystalline silicon film, causing the noncrystalline silicon film to undergo lateral crystal growth to form a crystallized silicon film, wherein the optics comprise a beam shaping part for shaping the CW la...

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Bibliographische Detailangaben
1. Verfasser:	SAWAI, TAKUYA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	This laser annealing device causes a CW laser light to move unidirectionally relative to a noncrystalline silicon film, causing the noncrystalline silicon film to undergo lateral crystal growth to form a crystallized silicon film, wherein the optics comprise a beam shaping part for shaping the CW laser light into a laser beam forming a ring of condensed light, and a beam splitting part having a reflective surface for splitting and reflecting the shaped circular laser beam to generate a semicircular laser beam. The optics irradiate the semicircular laser beam onto a surface of the noncrystalline silicon film to be irradiated in such a manner that the outer peripheral edge of the semicircular laser beam is oriented in the relative moving direction of the laser beam.