Method of sputter-coating substrates or of manufacturing sputter coated substrates and apparatus

Whenever substrates (7) are rotationally and continuously conveyed in a vacuum recipient around a common axis (A1) and past a magnetron sputter source, sputtering of the target (11), rotating around a central target axis, by the stationary magnetron plasma (25) is adapted to the azimuthal extents (A...

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Bibliographische Detailangaben
Hauptverfasser:	SCHUENGEL, EDMUND, GOOD, ROMEO, GEES, SILVIO, SCHWYN THOENY, SILVIA, PADRUN, MARCO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Whenever substrates (7) are rotationally and continuously conveyed in a vacuum recipient around a common axis (A1) and past a magnetron sputter source, sputtering of the target (11), rotating around a central target axis, by the stationary magnetron plasma (25) is adapted to the azimuthal extents (AE1,AE2,AE3) radially differently spaced areas of the substrates (7) become exposed to the target (11) thereby improving homogeneity of deposited layer thickness on the substrates (7) and ensuring that the complete sputter surface of the target (11) is net-sputtered.