Batch semiconductor packaging structures with back-deposited shielding layer and manufacturing method thereof

The present invention relates to batch semiconductor packaging structures with back-deposited shielding layer and manufacturing method thereof and has a grid frame having multiple sub-frames to stick on an adhesive substrate. Multiple semiconductor devices are respectively aligned with corresponding sub-frames and are stuck on the adhesive substrate. Then a metal layer covers the semiconductor devices and the grid frame. A distance between four peripheries of a bottom of each semiconductor device and the corresponding frame is smaller than a distance between the bottom and the adhesive substrate, so that the a portion of the metal layer extended to the peripheries of the bottom is effectively reduced during forming the metal layer. After the semiconductor devices are picked up, no metal burr is remined thereon. Therefore, the adhesive substrate is not cut to form openings and is reuse. The grid frame is also reuse so the manufacturing cost of the present invention is decreased.