Nanowire device

A composition of matter comprising: a graphene layer carried directly on a sapphire, Si, SiC, Ga2O3 or group III-V semiconductor substrate; wherein a plurality of holes are present through said graphene layer; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	MUNSHI, MAZID, VIGEN, LEIDULV, DHEERAJ, DASA L, FIMLAND, BJORN-OVE M, WEMAN, HELGE, BARRIET, DAVID
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	A composition of matter comprising: a graphene layer carried directly on a sapphire, Si, SiC, Ga2O3 or group III-V semiconductor substrate; wherein a plurality of holes are present through said graphene layer; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.