Modified stacks for 3D NAND

Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an...

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Bibliographische Detailangaben
Hauptverfasser:	PADHI, DEENESH, ENSLOW, KRISTOPHER, WANG, WEN-JIAO, MAHER, JOSHUA, HAN, XINHAI, RAJAGOPALAN, NAGARAJAN, YANG, CHUAN-XI, TEONG, QI EN, OGATA, MASAKI, JAIN, ALOK, YU, HANG, WANG, CHUAN-YING, HU, KE-SONG, LEONG, PHAIK LYNN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at.%. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.