Nickel doped indium tin oxide target and manufacturing method thereof

Provided is a nickel doped indium tin oxide target, which consists of indium, tin, nickel and oxygen. The amount of nickel relative to the total amount of indium, tin and nickel is more than 0 atomic percent and less than or equal to 3 atomic percent, and an average volume resistivity of the nickel...

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Bibliographische Detailangaben
Hauptverfasser:	KE, PO-HSIEN, HSIEH, CHENG-YEN, LIU, YEN-MING, CHIEN, YU-TSANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is a nickel doped indium tin oxide target, which consists of indium, tin, nickel and oxygen. The amount of nickel relative to the total amount of indium, tin and nickel is more than 0 atomic percent and less than or equal to 3 atomic percent, and an average volume resistivity of the nickel doped indium tin oxide target is less than 2x10-4 [Omega]-cm. The technical means of the invention can significantly reduce the formation of nodules occurred on the surface of the nickel doped indium tin oxide target after sputtering for a while, and thus it increases the sputtering stability and obtains a thin film with high quality.