High voltage device and manufacturing method thereof

The present invention provides a high voltage device and manufacturing method thereof. The high voltage device includes: a semiconductor layer, a drift oxide region, a well, a body region, a gate, at least one sub-gate, a source, and a drain. The drift oxide region is located on a drift region in an...

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Bibliographische Detailangaben
Hauptverfasser:	CHIU, CHIEN-WEI, CHANG, CHUN-LUNG, HSIUNG, CHIH-WEN, CHIU, KUOIN, WENG, WU-TE, YU, KUN-HUANG, YANG, TA-YUNG, CHEN, CHIEN-YU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present invention provides a high voltage device and manufacturing method thereof. The high voltage device includes: a semiconductor layer, a drift oxide region, a well, a body region, a gate, at least one sub-gate, a source, and a drain. The drift oxide region is located on a drift region in an operation region. The sub-gate is formed on the drift oxide region right above the drift region. The sub-gate is parallel with the gate. A conductive layer of the gate has a first conductive type, and a conductive layer of the sub-gate has a second conductive type or is an intrinsic semiconductor structure.