Method for producing InP quantum dot precursors and method for producing InP quantum dots

The present invention pertains to a method for producing InP quantum dot precursors from a phosphorus source and an indium source, wherein a silylphosphine compound represented by general formula (1), which contains a compound represented by general formula (2) in an amount of 0.3 mol% or less, is u...

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Bibliographische Detailangaben
Hauptverfasser:	SAKANOUE, TOMO, NAKATSUI, KAZUHIRO, TSUZUKIISHI, TAIKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ACYCLIC OR CARBOCYCLIC COMPOUNDS ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM ADHESIVES CHEMISTRY COMPOUNDS THEREOF DYES INORGANIC CHEMISTRY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NANOTECHNOLOGY NATURAL RESINS NON-METALLIC ELEMENTS ORGANIC CHEMISTRY PAINTS PERFORMING OPERATIONS POLISHES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention pertains to a method for producing InP quantum dot precursors from a phosphorus source and an indium source, wherein a silylphosphine compound represented by general formula (1), which contains a compound represented by general formula (2) in an amount of 0.3 mol% or less, is used as the phosphorus source. Further, the present invention provides a method for producing InP quantum dots, said method comprising heating the InP quantum dot precursors at a temperature of 200-350 DEG C inclusive to thereby give InP quantum dots. (R is as defined in the description.).