CMP particle and CMP slurry composition

The present invention provides a chemical-mechanical polishing particle having high polishing quality with a high polishing rate and few defects or scratches by modifying the surface of a polishing particle, and a polishing slurry composition comprising same.

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Bibliographische Detailangaben
Hauptverfasser: JIN, SUNG-HOON, LEE, MIN-GUN, JEON, SEUNG-HUN, YOO, JAE-HONG, PARK, JONG-DAI, CHO, GYEONG-SOOK, BYUN, KYUNG-ROCK, PARK, HYE-JUNG, KIM, JAE-HYUN, LEE, GOO-HWA, MOON, WEOUN-GYUEN, SHIN, KYU-SOON
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:The present invention provides a chemical-mechanical polishing particle having high polishing quality with a high polishing rate and few defects or scratches by modifying the surface of a polishing particle, and a polishing slurry composition comprising same.