Film-forming method, film-forming apparatus, and oxidation method

A film-forming method that forms an oxide film upon a substrate inside a chamber has: a step in which a raw material gas for forming the oxide film inside the chamber is supplied and the gas is adhered on to the substrate; and a step in which hydrogen gas and oxygen gas are supplied inside the chamb...

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Bibliographische Detailangaben
Hauptverfasser:	MIYATANI, KOTARO, IKEUCHI, TOSHIYUKI, SHIMOMURA, KOUJI, SHIMAMOTO, RYOUN, HONG, YOUNG-GI, NORO, NAOTAKA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A film-forming method that forms an oxide film upon a substrate inside a chamber has: a step in which a raw material gas for forming the oxide film inside the chamber is supplied and the gas is adhered on to the substrate; and a step in which hydrogen gas and oxygen gas are supplied inside the chamber while continuing to be preheated, a radical including oxygen is generated, and the raw material gas adhered onto the substrate is oxidized. The adhesion and the oxidation are repeated. When either or both the hydrogen gas and the oxygen gas are supplied, the supply partial pressure of the gas is relatively high when initially supplied and is changed so as to gradually decrease over time.