Plasma processing method
The present invention provides a plasma processing method for forming a polysilicon film mask layer, and makes it possible to suppress etching shape abnormalities. This plasma processing method is for plasma etching a polysilicon film, wherein a mixed gas comprising a halogen gas, a fluorocarbon gas...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The present invention provides a plasma processing method for forming a polysilicon film mask layer, and makes it possible to suppress etching shape abnormalities. This plasma processing method is for plasma etching a polysilicon film, wherein a mixed gas comprising a halogen gas, a fluorocarbon gas, an oxygen gas, and a carbonyl sulfide gas is used for plasma etching the polysilicon film. |
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