Etching solution, method for processing object to be processed, and method for manufacturing semiconductor element
A ruthenium etching solution including or thoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, an...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A ruthenium etching solution including or thoperiodic acid and ammonia, the pH of the ruthenium etching solution being 3 or higher. In addition, a method for processing an object to be processed including etching an object to be processed including ruthenium, using the ruthenium etching solution, and a method for manufacturing a semiconductor element. |
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