Process for pulling a cylindrical crystal from a melt

A method for regulating the diameter of a crystal (5) provides that a constant crystal lifting speed (13) is maintained and that for regulating the diameter the heat radiation onto the lower outer surface of the crystal (5) is influenced by varying the height of an annular gap (12) between a heat sh...

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Bibliographische Detailangaben
1. Verfasser:	MUHE, ANDREAS
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method for regulating the diameter of a crystal (5) provides that a constant crystal lifting speed (13) is maintained and that for regulating the diameter the heat radiation onto the lower outer surface of the crystal (5) is influenced by varying the height of an annular gap (12) between a heat shield (10) surrounding the crystal (5) and the melt surface. This does not only affect the crystal diameter, but also causes a vertical temperature gradient that is constant over the diameter of the crystal, which increases the homogeneity of the crystal (5).