Process method for heterogeneous epitaxial semiconductor material on mica sheet
The invention is disclosed a process method for heterogeneous epitaxial semiconductor material on mica sheet, comprising steps of providing a mica substrate; and depositing at least one semiconductor film on the mica substrate to form a flexural substrate. The flexural substrate is resistant to bend...
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| Hauptverfasser: | , , |
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention is disclosed a process method for heterogeneous epitaxial semiconductor material on mica sheet, comprising steps of providing a mica substrate; and depositing at least one semiconductor film on the mica substrate to form a flexural substrate. The flexural substrate is resistant to bending, and can be applied to a variety of applications such as wearable and portable optoelectronic devices, as well as improve speed and bandwidth for commercial and military systems, and is highly competitive in the market. |
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