Silicon layer etchant composition, method of preparing the same and method of forming pattern

Silicon layer etchant composition, method of preparing the same and method of forming pattern

A silicon layer etchant composition, a method of preparing the same and a method of forming a pattern, the composition including about 1 wt% to about 20 wt% of an alkylammonium hydroxide; about 1 wt% to about 30 wt% of an amine compound; about 0.01 wt% to about 0.2 wt% of a nonionic surfactant inclu...

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Bibliographische Detailangaben
Hauptverfasser: SHIN, DONG-WUN, OH, JUNG-MIN, LEE, HYO-SAN, YOON, HYO-JOONG, HAN, HOON, JEON, CHANG-SU, ROH, JIN-KYU
Format: Patent
Sprache:chi ; eng
Schlagworte:
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A silicon layer etchant composition, a method of preparing the same and a method of forming a pattern, the composition including about 1 wt% to about 20 wt% of an alkylammonium hydroxide; about 1 wt% to about 30 wt% of an amine compound; about 0.01 wt% to about 0.2 wt% of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt% being based on a total weight of the silicon layer etchant composition.