Plasma chemical processing of wafer dies

A method of processing wafer dies at least partially separated by cut-lines formed in a surface of the wafer, comprises generating a plasma, for example using an RF source, and localising the reaction of the plasma with the wafer surface at vicinities of the cut-lines so as to etch the wafer in the...

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Bibliographische Detailangaben
Hauptverfasser: WANG, SHAO-YING, BECKERS, NICOLLE MARIA BERTA JOZEFINA, EVERTSEN, ROGIER
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A method of processing wafer dies at least partially separated by cut-lines formed in a surface of the wafer, comprises generating a plasma, for example using an RF source, and localising the reaction of the plasma with the wafer surface at vicinities of the cut-lines so as to etch the wafer in the vicinities of the cut-lines. Advantageously, the wafer may be laser-cut.