Light-emitting device and the manufacturing method thereof

Light-emitting device and the manufacturing method thereof

A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor lay...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YEH, HUIUN, KUO, DE-SHAN, TSAI, MIN-YEN, CHEN, JUIN-YANG, CHIU, PO-SHUN, TU, CHUN-HSIANG, KO, TSUN-KAI, CHUNG, CHIEN-KAI, KO, CHUN-TENG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.