Chemical-mechanical polishing slurry and its using method
The present invention provides a chemical-mechanical polishing slurry, comprising abrasive particles and an ethoxylated-butoxylated alkyl alcohol. By adding the non-ionic surfactant with a specific molecular structure, the CMP slurry of the present invention can obtain high removal rate of Silicon D...
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| creator | ZHOU, WEN-TING HUANG, YUE-RUI JING, JIAN-FEN YANG, VIOLA JUN-YA LI, HENG YAO, YING BIAN, PETER PENGNG |
| description | The present invention provides a chemical-mechanical polishing slurry, comprising abrasive particles and an ethoxylated-butoxylated alkyl alcohol. By adding the non-ionic surfactant with a specific molecular structure, the CMP slurry of the present invention can obtain high removal rate of Silicon Dioxide, meanwhile it can greatly improve the surface roughness of Silicon Dioxide (TEOS) and effectively reduce the surface contaminant after polishing. Therefore it provides a good surface finish and flatness after polishing which can meet the requirements on dielectric material under various process conditions. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202024292A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202024292A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202024292A3</originalsourceid><addsrcrecordid>eNrjZLB0zkjNzUxOzNHNTU3OSMwDMRUK8nMyizMy89IVinNKi4oqFRLzUhQyS4oVSotBgrmpJRn5KTwMrGmJOcWpvFCam0HRzTXE2UM3tSA_PrW4IDE5NS-1JD4k3MgACE2MLI0cjYlRAwBWvC7y</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Chemical-mechanical polishing slurry and its using method</title><source>esp@cenet</source><creator>ZHOU, WEN-TING ; HUANG, YUE-RUI ; JING, JIAN-FEN ; YANG, VIOLA JUN-YA ; LI, HENG ; YAO, YING ; BIAN, PETER PENGNG</creator><creatorcontrib>ZHOU, WEN-TING ; HUANG, YUE-RUI ; JING, JIAN-FEN ; YANG, VIOLA JUN-YA ; LI, HENG ; YAO, YING ; BIAN, PETER PENGNG</creatorcontrib><description>The present invention provides a chemical-mechanical polishing slurry, comprising abrasive particles and an ethoxylated-butoxylated alkyl alcohol. By adding the non-ionic surfactant with a specific molecular structure, the CMP slurry of the present invention can obtain high removal rate of Silicon Dioxide, meanwhile it can greatly improve the surface roughness of Silicon Dioxide (TEOS) and effectively reduce the surface contaminant after polishing. Therefore it provides a good surface finish and flatness after polishing which can meet the requirements on dielectric material under various process conditions.</description><language>chi ; eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES ; TRANSPORTING</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200701&DB=EPODOC&CC=TW&NR=202024292A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200701&DB=EPODOC&CC=TW&NR=202024292A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHOU, WEN-TING</creatorcontrib><creatorcontrib>HUANG, YUE-RUI</creatorcontrib><creatorcontrib>JING, JIAN-FEN</creatorcontrib><creatorcontrib>YANG, VIOLA JUN-YA</creatorcontrib><creatorcontrib>LI, HENG</creatorcontrib><creatorcontrib>YAO, YING</creatorcontrib><creatorcontrib>BIAN, PETER PENGNG</creatorcontrib><title>Chemical-mechanical polishing slurry and its using method</title><description>The present invention provides a chemical-mechanical polishing slurry, comprising abrasive particles and an ethoxylated-butoxylated alkyl alcohol. By adding the non-ionic surfactant with a specific molecular structure, the CMP slurry of the present invention can obtain high removal rate of Silicon Dioxide, meanwhile it can greatly improve the surface roughness of Silicon Dioxide (TEOS) and effectively reduce the surface contaminant after polishing. Therefore it provides a good surface finish and flatness after polishing which can meet the requirements on dielectric material under various process conditions.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>POLISHING</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB0zkjNzUxOzNHNTU3OSMwDMRUK8nMyizMy89IVinNKi4oqFRLzUhQyS4oVSotBgrmpJRn5KTwMrGmJOcWpvFCam0HRzTXE2UM3tSA_PrW4IDE5NS-1JD4k3MgACE2MLI0cjYlRAwBWvC7y</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>ZHOU, WEN-TING</creator><creator>HUANG, YUE-RUI</creator><creator>JING, JIAN-FEN</creator><creator>YANG, VIOLA JUN-YA</creator><creator>LI, HENG</creator><creator>YAO, YING</creator><creator>BIAN, PETER PENGNG</creator><scope>EVB</scope></search><sort><creationdate>20200701</creationdate><title>Chemical-mechanical polishing slurry and its using method</title><author>ZHOU, WEN-TING ; HUANG, YUE-RUI ; JING, JIAN-FEN ; YANG, VIOLA JUN-YA ; LI, HENG ; YAO, YING ; BIAN, PETER PENGNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202024292A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>POLISHING</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHOU, WEN-TING</creatorcontrib><creatorcontrib>HUANG, YUE-RUI</creatorcontrib><creatorcontrib>JING, JIAN-FEN</creatorcontrib><creatorcontrib>YANG, VIOLA JUN-YA</creatorcontrib><creatorcontrib>LI, HENG</creatorcontrib><creatorcontrib>YAO, YING</creatorcontrib><creatorcontrib>BIAN, PETER PENGNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHOU, WEN-TING</au><au>HUANG, YUE-RUI</au><au>JING, JIAN-FEN</au><au>YANG, VIOLA JUN-YA</au><au>LI, HENG</au><au>YAO, YING</au><au>BIAN, PETER PENGNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chemical-mechanical polishing slurry and its using method</title><date>2020-07-01</date><risdate>2020</risdate><abstract>The present invention provides a chemical-mechanical polishing slurry, comprising abrasive particles and an ethoxylated-butoxylated alkyl alcohol. By adding the non-ionic surfactant with a specific molecular structure, the CMP slurry of the present invention can obtain high removal rate of Silicon Dioxide, meanwhile it can greatly improve the surface roughness of Silicon Dioxide (TEOS) and effectively reduce the surface contaminant after polishing. Therefore it provides a good surface finish and flatness after polishing which can meet the requirements on dielectric material under various process conditions.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING |
| title | Chemical-mechanical polishing slurry and its using method |
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