Chemical-mechanical polishing slurry and its using method

The present invention provides a chemical-mechanical polishing slurry, comprising abrasive particles and an ethoxylated-butoxylated alkyl alcohol. By adding the non-ionic surfactant with a specific molecular structure, the CMP slurry of the present invention can obtain high removal rate of Silicon D...

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Bibliographische Detailangaben
Hauptverfasser:	ZHOU, WEN-TING, HUANG, YUE-RUI, JING, JIAN-FEN, YANG, VIOLA JUN-YA, LI, HENG, YAO, YING, BIAN, PETER PENGNG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention provides a chemical-mechanical polishing slurry, comprising abrasive particles and an ethoxylated-butoxylated alkyl alcohol. By adding the non-ionic surfactant with a specific molecular structure, the CMP slurry of the present invention can obtain high removal rate of Silicon Dioxide, meanwhile it can greatly improve the surface roughness of Silicon Dioxide (TEOS) and effectively reduce the surface contaminant after polishing. Therefore it provides a good surface finish and flatness after polishing which can meet the requirements on dielectric material under various process conditions.