Method for depositing metal oxide film in liquid environment

Method for depositing metal oxide film in liquid environment

A method for depositing a metal oxide film in a liquid environment, comprising steps of: (S1) dissolving an oxidizing agent in solvent with hydrogen bond to form a solution, and (S2) placing a substrate into the solution for performing a deposition reaction to deposit a metal oxide hydroxide film on...

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Hauptverfasser: CHEN, CHUN-HU, YANG, CHANG-YING, JHANG, REN-HUAI
Format: Patent
Sprache:chi ; eng
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CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
INORGANIC CHEMISTRY
METALLURGY
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creator CHEN, CHUN-HU
YANG, CHANG-YING
JHANG, REN-HUAI
description A method for depositing a metal oxide film in a liquid environment, comprising steps of: (S1) dissolving an oxidizing agent in solvent with hydrogen bond to form a solution, and (S2) placing a substrate into the solution for performing a deposition reaction to deposit a metal oxide hydroxide film on the substrate, wherein the oxidizing agent is potassium permanganate, potassium chromate, or potassium dichromate, a reaction temperature of the deposition reaction ranges from 1 to 99 degrees Celsius, and a reaction pressure environment of the deposition reaction is an atmospheric pressure environment.
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subjects CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
INORGANIC CHEMISTRY
METALLURGY
title Method for depositing metal oxide film in liquid environment
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