Method of manufacturing semiconductor structure

A method of manufacturing a semiconductor structure includes loading the substrate from a first load lock chamber into a first processing chamber; disposing a conductive layer over the substrate in the first processing chamber; loading the substrate from the first processing chamber into the first l...

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Bibliographische Detailangaben
Hauptverfasser: HSU, JYH-SHIOU, YANG, CHI-MING, HSU, TZU-JENG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A method of manufacturing a semiconductor structure includes loading the substrate from a first load lock chamber into a first processing chamber; disposing a conductive layer over the substrate in the first processing chamber; loading the substrate from the first processing chamber into the first load lock chamber; loading the substrate from the first load lock chamber into an enclosure filled with an inert gas and disposed between the first load lock chamber and a second load lock chamber; loading the substrate from the enclosure into the second load lock chamber; loading the substrate from the second load lock chamber into a second processing chamber; disposing a conductive member over the conductive layer in the second processing chamber; loading the substrate from the second processing chamber into the second load lock chamber; and loading the substrate from the second load lock chamber into a second load port.