Method for treating substrate and rinsing liquid

Provided are a method for treating a substrate, including rinsing a surface of a substrate in which a pattern having an aspect ratio of 10 or more is provided on the surface with a rinsing liquid, in which the rinsing liquid includes an organic solvent (S1) having a vapor pressure at 20 DEG C of 25...

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Bibliographische Detailangaben
Hauptverfasser: NAMIKI, TAKUMI, MORI, DAIJIRO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:Provided are a method for treating a substrate, including rinsing a surface of a substrate in which a pattern having an aspect ratio of 10 or more is provided on the surface with a rinsing liquid, in which the rinsing liquid includes an organic solvent (S1) having a vapor pressure at 20 DEG C of 25 mmHg or less; and a rinsing liquid for rinsing the surface of the substrate in which a pattern having an aspect ratio of 10 or more is provided on the surface, including an organic solvent (S1) having a vapor pressure at 20 DEG C of 25 mmHg or less.