Method for determining oxygen or carbon in semiconductor material

A method for determining the content of oxygen or carbon in semiconductor material by gas fusion analysis comprising cleaning a crucible and a test sample of the semiconductor material by inductively heating the test sample in the crucible to a temperature of not less than 1300 DEG C in a stream having a composition of nitrogen or a mixture of nitrogen and at least one rare gas; and determining the content of oxygen or carbon in the test sample of semiconductor material in a measuring chamber (2) of a measuring device (100), comprising inductively heating in the measuring chamber (2) the test sample in a gas stream having said composition and melting the test sample in the crucible (1); reacting oxygen contained in the test sample with carbon or reacting carbon contained in the test sample with oxygen to form at least one oxidation product; and determining the amount of the at least one oxidation product and using the amount of the at least one oxidation product as a measure of the content of oxygen or carbon